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Proceedings Paper

Accurate simulation of terahertz transmission through doped silicon junctions
Author(s): Chih-Yu Jen; Christiaan Richter
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Paper Abstract

In the previous work we presented results demonstrating the ability of transmission mode terahertz time domain spectroscopy (THz-TDS) to detect doping profile differences and deviations in silicon. This capability is potentially useful for quality control in the semiconductor and photovoltaic industry. We shared subsequent experimental results revealing that terahertz interactions with both electrons and holes are strong enough to recognize both n- and p-type doping profile changes. We also displayed that the relatively long wavelength (~ 1 mm) of THz radiation allows this approach to be compatible with surface treatments like for instance the texturing (scattering layer) typically used in the solar industry. In this work we continuously demonstrate the accuracy with which current terahertz optical models can simulate the power spectrum of terahertz radiation transmitted through junctions with known doping profiles (as determined with SIMS). We conclude that current optical models predict the terahertz transmission and absorption in silicon junctions well.

Paper Details

Date Published: 14 March 2015
PDF: 7 pages
Proc. SPIE 9361, Ultrafast Phenomena and Nanophotonics XIX, 93611H (14 March 2015); doi: 10.1117/12.2077007
Show Author Affiliations
Chih-Yu Jen, Rochester Institute of Technology (United States)
Christiaan Richter, Rochester Institute of Technology (United States)


Published in SPIE Proceedings Vol. 9361:
Ultrafast Phenomena and Nanophotonics XIX
Markus Betz; Abdulhakem Y. Elezzabi; Kong-Thon Tsen, Editor(s)

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