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Proceedings Paper

Spatial variations of optical properties of semipolar InGaN quantum wells
Author(s): Saulius Marcinkevičius; Kristina Gelžinytė; Ruslan Ivanov; Yuji Zhao; Shuji Nakamura; Steven P. DenBaars; James S. Speck
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Paper Abstract

Spatial variations of band potentials and properties of carrier recombination were examined in semipolar (2021) plane InGaN/GaN single quantum wells by scanning near-field photoluminescence (PL) spectroscopy. The quantum wells had In content from 0.11 to 0.36 and were emitting from violet to yellow-green. Near-field scans showed small PL peak energy and linewidth variations with standard deviations below 10 meV, which confirms small alloy composition variations in the quantum wells. The scans revealed large, ~5 to 10 μm size areas of similar PL parameter values, as opposed to 100 nm scale variations, often reported for InGaN wells. With increased excitation power, an untypical photoluminescence peak energy shift to lower energies was observed. The shift was attributed to density dependent carrier redistribution between nm-scale sites of different potentials. The experimental results show that in the (2021) plane InGaN quantum wells the localization potentials are shallow and the recombination properties are spatially rather uniform, which confirms the high potential of these QWs for photonic applications.

Paper Details

Date Published: 13 March 2015
PDF: 9 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93631U (13 March 2015); doi: 10.1117/12.2076973
Show Author Affiliations
Saulius Marcinkevičius, KTH Royal Institute of Technology (Sweden)
Kristina Gelžinytė, KTH Royal Institute of Technology (Sweden)
Ruslan Ivanov, KTH Royal Institute of Technology (Sweden)
Yuji Zhao, Univ. of California, Santa Barbara (United States)
Shuji Nakamura, Univ. of California, Santa Barbara (United States)
Steven P. DenBaars, Univ. of California, Santa Barbara (United States)
James S. Speck, Univ. of California, Santa Barbara (United States)


Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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