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Proceedings Paper

4H-SiC detectors for ultraviolet light monitoring
Author(s): M. Mazzillo; A. Sciuto; P. Badalà; B. Carbone; A. Russo; S. Coffa
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Paper Abstract

Silicon Carbide (SiC) provides the unique property of near-perfect visible blindness and very high signal-to-noise ratio due to the high quantum efficiency and low dark current even at high temperature. These features make SiC the best available material for the manufacturing of visible blind semiconductor ultraviolet (UV) light detectors. Thanks to their properties, SiC detectors have been extensively used in fact for flame detection monitoring, UV sterilization and astronomy. Here we report on the electrical and optical performance of patterned thin metal film NiSi/4H-SiC vertical Schottky photodiodes with different semiconductor exposed area suitably designed for UV light monitoring.

Paper Details

Date Published: 27 February 2015
PDF: 6 pages
Proc. SPIE 9367, Silicon Photonics X, 93671B (27 February 2015); doi: 10.1117/12.2076702
Show Author Affiliations
M. Mazzillo, STMicroelectronics (Italy)
A. Sciuto, Istituto per la Microelettronica e Microsistemi, CNR (Italy)
P. Badalà, STMicroelectronics (Italy)
B. Carbone, STMicroelectronics (Italy)
A. Russo, STMicroelectronics (Italy)
S. Coffa, STMicroelectronics (Italy)


Published in SPIE Proceedings Vol. 9367:
Silicon Photonics X
Graham T. Reed; Michael R. Watts, Editor(s)

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