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Proceedings Paper

Individual defect dynamics and quantum-transport effects in metal nanobridges
Author(s): Daniel C. Ralph; Kristin S. Ralls; Robert A. Buhrman
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Paper Abstract

We have fabricated metal constrictions having diameters as small as 3 nm. This is narrow enough that effects due to single defects within the constriction region are visible as changes in the resistance. We will discuss the voltage and temperature dependence of the individual defect motion that can lead to electromigration in these samples. We will also present observations of magnetic defects and the presence of time-independent conductance fluctuations in these ballistic devices.

Paper Details

Date Published: 1 October 1990
PDF: 10 pages
Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); doi: 10.1117/12.20767
Show Author Affiliations
Daniel C. Ralph, Cornell Univ. (United States)
Kristin S. Ralls, Cornell Univ. (United States)
Robert A. Buhrman, Cornell Univ. (United States)

Published in SPIE Proceedings Vol. 1284:
Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors
Harold G. Craighead; J. Murray Gibson, Editor(s)

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