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Proceedings Paper

Study of interface state trap density on characteristics of MOS-HEMT
Author(s): Ming-Chun Tseng; Ming-Hsien Hung; Dong-Sing Wuu; Ray-Hua Horng
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Paper Abstract

In this study, the effects of chemical treatment on the properties of MOS capacitors and metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) were studied. The structure consist of Al2O3/u-GaN/AlN buffer/ Si substrate and Al2O3 (10 nm)/u-AlGaN (25 nm)/u-GaN (2μm)/AlN buffer/Si substrate for MOS capacitor and MOS-HEMT device, respectively. There are four chemical treatment recipes, which consist of organic solvents, oxygen plasma, BCl3 plasma, dilute acidic solvent, hydrofluoric acid and RCA-like clean process to remove the metal ions, organic contamination and native oxide. Four different chemical treatment recipes treated the surface of u-GaN before Al2O3 was grown on the treated surface to reduce the interface state trap densities (Dit). The Dit value was calculated from measurement of C-V curve with 1M Hz frequency. The formation of interface state trap of u-GaN surface is modified by different chemical solution of varied chemical treatment recipe, which further influence the breakdown voltage (Vbk), on-resistance (Ron), threshold voltage (Vth) and drain current (Id) of MOS-HEMT. The Vth of MOS-HEMT with organic solvents clean treatment is -11.00V. The MOS-HEMT after BCl3 plasma and organic solvents clean treatment shows the lowest Vth of -9.55V. The electronic characteristics of MOS HEMT device with four different chemical treatment recipes were investigated in this article.

Paper Details

Date Published: 13 March 2015
PDF: 8 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93630M (13 March 2015); doi: 10.1117/12.2076678
Show Author Affiliations
Ming-Chun Tseng, National Chung Hsing Univ. (Taiwan)
Ming-Hsien Hung, National Chung Hsing Univ. (Taiwan)
Dong-Sing Wuu, National Chung Hsing Univ. (Taiwan)
Ray-Hua Horng, National Chung Hsing Univ. (Taiwan)


Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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