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Proceedings Paper

Type-I QW cascade diode lasers with 830 mW of CW power at 3 µm
Author(s): L. Shterengas; R. Liang; T. Hosoda; G. Kipshidze; G. Belenky; S. S. Bowman; R. L. Tober
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Paper Abstract

Cascade pumping schemes that utilize single-QW gain stages enhanced both the power conversion efficiency and the output power level of GaSb-based diode lasers that emit near and above 3 μm at room temperature. The cascade lasers discussed in this work had densely stacked type-I QWs gain stages characterized by high differential gain. The 3 μm emitting devices demonstrated CW threshold current densities near 100 A/cm2, a twofold improvement over the previous world record, that resulted in peak power conversion efficiencies increasing to 16% at 17°C. Comparable narrow ridge two-stage devices generated more than 100 mW of CW power with ~10% power conversion efficiencies. Three-stage multimode cascade lasers emitted 960 mW of CW output power near 3 μm and 120 mW CW near 3.3 μm.

Paper Details

Date Published: 10 March 2015
PDF: 9 pages
Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93820X (10 March 2015); doi: 10.1117/12.2076631
Show Author Affiliations
L. Shterengas, Stony Brook Univ. (United States)
R. Liang, Stony Brook Univ. (United States)
T. Hosoda, Stony Brook Univ. (United States)
G. Kipshidze, Stony Brook Univ. (United States)
G. Belenky, Stony Brook Univ. (United States)
S. S. Bowman, U.S. Army Research Lab. (United States)
R. L. Tober, U.S. Army Research Lab. (United States)


Published in SPIE Proceedings Vol. 9382:
Novel In-Plane Semiconductor Lasers XIV
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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