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Proceedings Paper

Optimising the defect filter layer design for III/V QDs on Si for integrated laser applications
Author(s): Jonathan R. Orchard; Jiang Wu; Siming Chen; Qi Jiang; Thomas Ward; Richard Beanland; Huiyun Lui; David J. Mowbray
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Paper Abstract

We introduce the concept of using strained superlattice structures as defect filters, with their purpose to reduce the upwards propagation of dislocations that result from the lattice mismatch which occurs when III-V materials are grown on silicon substrates. Three samples with defect filter layers are grown on Si with and without in situ annealing and are compared to a similar structure grown on a GaAs substrate. Transmission electron microscopy is used to verify the effectiveness of the different designs grown on Si, with the twice-annealed sample reducing the number of defects present in the active region by 99.9%. Optical studies carried out exhibit brighter room temperature emission and reduced photoluminescence quenching with temperature in samples where annealing is performed. Photoluminescence excitation measurements reveal a ~20 meV redshift in the position of the GaAs exciton for the samples grown on Si compared to that of GaAs, indicating a residual inplane tensile strain ~0.35% in the GaAs of the active region for the samples grown on Si.

Paper Details

Date Published: 27 February 2015
PDF: 7 pages
Proc. SPIE 9373, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII, 93730G (27 February 2015); doi: 10.1117/12.2076601
Show Author Affiliations
Jonathan R. Orchard, The Univ. of Sheffield (United Kingdom)
Jiang Wu, Univ. College London (United Kingdom)
Siming Chen, Univ. College London (United Kingdom)
Qi Jiang, Univ. College London (United Kingdom)
Thomas Ward, The Univ. of Warwick (United Kingdom)
Richard Beanland, The Univ. of Warwick (United Kingdom)
Huiyun Lui, Univ. College London (United Kingdom)
David J. Mowbray, The Univ. of Sheffield (United Kingdom)


Published in SPIE Proceedings Vol. 9373:
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII
Diana L. Huffaker; Holger Eisele, Editor(s)

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