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Proceedings Paper

Novel InAs/GaSb/AlSb tunnel structures
Author(s): David H. Chow; Jan Soederstroem; D. A. Collins; David Z.Y. Ting; Edward T. Yu; Thomas C. McGill
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Paper Abstract

The nearly lattice-matched InAs/GaSb/A1Sb system offers tremendous flexibility in designing novel heterostructures due to its wide range of band alignments. We have recently exploited this advantage to demonstrate a new class of negative differential resistance (NDR) devices based on interband tunneling. We have also studied "traditional" double barrier (resonant) and single barrier NDR tunnel structures in the InAs/GaSb/AlSb system. Several of the interband and resonant tunneling structures display excellent peak current densities (as high as 4 x 1O A/cm2 ) and/or peak-to-valley current ratios (as high as 20:1 and 88:1 at 300 K and 77 K, respectively), offering great promise for high frequency and logic applications.

Paper Details

Date Published: 1 October 1990
PDF: 12 pages
Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20765
Show Author Affiliations
David H. Chow, California Institute of Technology (United States)
Jan Soederstroem, California Institute of Technology (United States)
D. A. Collins, California Institute of Technology (United States)
David Z.Y. Ting, California Institute of Technology (United States)
Edward T. Yu, California Institute of Technology (United States)
Thomas C. McGill, California Institute of Technology (United States)


Published in SPIE Proceedings Vol. 1283:
Quantum Well and Superlattice Physics III
Gottfried H. Doehler; Emil S. Koteles; Joel N. Schulman, Editor(s)

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