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Proceedings Paper

Optical nonlinearities of GaAs/Ga1-xAlxAs superlattices
Author(s): Hui Xie; Lionel R. Friedman; L. R. Ram-Mohan
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Paper Abstract

The third order nonlinear optical susceptibility, of the GaAs/Gao.7A10.3As superlattice is calculated by determining the enhanced band nonparabolicity in the superlattice growth direction. A 4-band k.p model is used for the band structure of the constituent bulk semiconductors, and the superlattice conduction minibands are obtained using a transfer matrix method. Estimates for ) , averaged over the Fermi distribution of energies, are made at T = 0 and at room temperature for a number of representative values for carrier concentrations and for various layer thicknesses. In-plane nonparabolicity is incorporated, and no approximations are made for the Fermi distribution of carriers over the lowest and the first excited minibands. For the GaAs/Gai_AlAs superlattice, it is found that the in-plane nonparabolicity has a negligible effect on both at T = 0 and at T = 300K. For T = 0 a superlinear behavior of x) with carrier concentration is obtained for Fermi energies near the top of the lowest miniband. Significant contributions to () occur from the first excited miniband in the case of wide wells, and that the magnitude of () is enhanced for wider wells and/or barriers.

Paper Details

Date Published: 1 October 1990
PDF: 12 pages
Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20764
Show Author Affiliations
Hui Xie, Worcester Polytechnic Institute (United States)
Lionel R. Friedman, Worcester Polytechnic Institute (United States)
L. R. Ram-Mohan, Worcester Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 1283:
Quantum Well and Superlattice Physics III
Gottfried H. Doehler; Emil S. Koteles; Joel N. Schulman, Editor(s)

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