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Proceedings Paper

Present and future of GaN power devices and their applications
Author(s): Daisuke Ueda
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Paper Abstract

This paper reviews the status quo of several GaN-based power devices. By using unique polarized heterostructure of GaN/AlGaN materials, NSJ (Natural Super Junction) diode was proposed to break through the trade-off between the blocking voltage and the on-resistance. Normally-off GaN-based device was realized by GIT (Gate Injection Transistor) structure, where p-type AlGaN hole-injector are provided as a gate reducing the on-resistance by conductivity modulation. Experimentally fabricated inverter system using GaN GIT achieved the world-highest conversion efficiency over 99.3%. Further, by combining the microwave performance and power handling capability of of GaN-based devices, we developed Drive-by-Microwave (DbM) technology as a DC-isolated gate driver for GaN power switch. This is a fusion of microwave and power devices for the first time using GaN-based materials

Paper Details

Date Published: 13 March 2015
PDF: 5 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 936310 (13 March 2015); doi: 10.1117/12.2076351
Show Author Affiliations
Daisuke Ueda, Kyoto Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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