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Proceedings Paper

Improved design of AlAs/GaAs resonant tunneling diodes
Author(s): Peng Cheng; James S. Harris
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Paper Abstract

We have investigated the effects of complex barrier structures in double barrier resonant tunneling diodes (DBRTDs). The largest room temperature peak-to-valley current ratios (PVCR) to date have been observed for AlGaAs/GaAs DBRTD. PVCRs as high as 5. 1 were observed in AlAs/GaAs DBRTD with an AL14Ga86As chair barrier in the cathode. We attribute the improvement in the PVCR to the chair barrier in the cathode which significantly reduces the valley current. The effects of a real, spatially separated Al,14Ga086As barrier in the anode and cathode sides of the DBRTDs were also investigated and a PVCR as high as 4.8 was observed when the A10• 14Ga86As barrier was on the anode side.

Paper Details

Date Published: 1 October 1990
PDF: 7 pages
Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20763
Show Author Affiliations
Peng Cheng, Stanford Univ. (United States)
James S. Harris, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 1283:
Quantum Well and Superlattice Physics III
Gottfried H. Doehler; Emil S. Koteles; Joel N. Schulman, Editor(s)

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