Share Email Print
cover

Proceedings Paper

Optical properties of small GaN/Al0.5Ga0.5N quantum dots grown on (11-22) GaN templates
Author(s): Julien Sellés; Daniel Rosales; Bernard Gil; Guillaume Cassabois; Thierry Guillet; Julien Brault; Benjamin Damilano; Philippe Vennéguès; Philippe de Mierry; Jean Massies
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

GaN/Al0.5Ga0.5N quantum dots deposited on the (11-22) plane have been grown by combining Molecular Beam Epitaxy (MBE) and Metal Organic Vapor Phase Epitaxy (MOVPE). The (11-22) GaN oriented template was realized by MOVPE starting from a M-plane oriented sapphire substrate. The average dot sizes are the following: between 15 and 20 nm in the <-1-123> and <1-100> directions and a height ranging between 0.8 and 1.4 nm. Their density is ranging between 2 and 8x1010cm-2. The crystal field splitting is measured in Al0.5Ga0.5N via polarized microphotoluminescence. We study the photoluminescence properties of small quantum dots which present innovative optical properties among which are the evolution of the polarization of the emitted photons at different temperatures. We also analyze the distortion of the photoluminescence at different time delays after the excitation pulse. A redshift is found that is attributed to the complex thermally-induced delocalization of the carriers through the assembly of dots from the smaller ones to the bigger ones.

Paper Details

Date Published: 13 March 2015
PDF: 8 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93630Z (13 March 2015); doi: 10.1117/12.2076284
Show Author Affiliations
Julien Sellés, Lab. Charles Coulomb, CNRS, Univ. Montpellier 2 (France)
Daniel Rosales, Lab. Charles Coulomb, CNRS, Univ. Montpellier 2 (France)
Bernard Gil, Univ. Montpellier 2 (France)
Lab. Charles Coulomb (France)
Guillaume Cassabois, Lab. Charles Coulomb, CNRS, Univ. Montpellier 2 (France)
Thierry Guillet, Lab. Charles Coulomb, CNRS, Univ. Montpellier 2 (France)
Julien Brault, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications (France)
Benjamin Damilano, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications (France)
Philippe Vennéguès, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications (France)
Philippe de Mierry, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications (France)
Jean Massies, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications (France)


Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

© SPIE. Terms of Use
Back to Top