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Proceedings Paper

Advances in single mode and high power AlGaInN laser diode technology for systems applications
Author(s): Stephen P. Najda; Piotr Perlin; Tadek Suski; Lujca Marona; Michal Boćkowski; Mike Leszczyński; Przemek Wisniewski; Robert Czernecki; Robert Kucharski; Grzegorz Targowski; Julita Smalc-Koziorowska; Szymon Stanczyk; Scott Watson; Antony E. Kelly
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Paper Abstract

The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries.

Paper Details

Date Published: 13 March 2015
PDF: 11 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93631A (13 March 2015); doi: 10.1117/12.2076268
Show Author Affiliations
Stephen P. Najda, TopGaN Ltd. (Poland)
Piotr Perlin, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Tadek Suski, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Lujca Marona, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Michal Boćkowski, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Mike Leszczyński, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Przemek Wisniewski, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Robert Czernecki, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Robert Kucharski, Ammono S.A. (Poland)
Grzegorz Targowski, TopGaN Ltd. (Poland)
Julita Smalc-Koziorowska, TopGaN Ltd. (Poland)
Szymon Stanczyk, Institute of High Pressure Physics (Poland)
Scott Watson, Univ. of Glasgow (United Kingdom)
Antony E. Kelly, Univ. of Glasgow (United Kingdom)


Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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