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Proceedings Paper

Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs
Author(s): Daniel Rosales; Bernard Gil; Morteza Monavarian; Fan Zhang; Serdal Okur; Natalia Izyumskaya; Vitaliy Avrutin; Ümit Özgür; Hadis Morkoç
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Paper Abstract

We studied the temperature dependence and the recombination dynamics of the photoluminescence of (1-101)-oriented semi-polar Al0.2Ga0.8N/GaN multiple quantum wells (MQW). The polarized low-temperature PL measurements reveal that radiative recombination exhibit an anisotropic behavior. The PL intensity at room temperature is reduced by one order of magnitude with respect to low temperature. The radiative decay time exhibits a mixed behavior: it is roughly constant between 8K to ranging near 140-150K and then rapidly increases with a slope of 10 ps.K-1. This behavior is indicative of coexistence of localized excitons and free excitons which relative proportion are statistically computed.

Paper Details

Date Published: 13 March 2015
PDF: 8 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93630J (13 March 2015); doi: 10.1117/12.2076207
Show Author Affiliations
Daniel Rosales, Lab. Charles Coulomb, CNRS, Univ. Montpellier 2 (France)
Bernard Gil, Univ. Montpellier 2 (France)
Lab. Charles Coulomb (France)
Morteza Monavarian, Virginia Commonwealth Univ. (United States)
Fan Zhang, Virginia Commonwealth Univ. (United States)
Serdal Okur, Virginia Commonwealth Univ. (United States)
Natalia Izyumskaya, Virginia Commonwealth Univ. (United States)
Vitaliy Avrutin, Virginia Commonwealth Univ. (United States)
Ümit Özgür, Virginia Commonwealth Univ. (United States)
Hadis Morkoç, Virginia Commonwealth Univ. (United States)


Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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