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Proceedings Paper

Studies of electronic structures of GaAs/AlAs superlattices by photoluminescence under hydrostatic pressure
Author(s): Zhao-Ping Wang; Guohua Li; De Sheng Jiang; He Xiang Han; Klaus H. Ploog
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Paper Abstract

The samples of (GaAs) (AlAs) superlattices (SLs) were grown by MIBE method on (001)-oriented semi-thsulathg GaAs substrates. The photoluminescence (PL) was measured at 77 K and under hydrostatic pressure in the range of 0- 30 Kbar. The dependence of the energy separation between conduction band Flike and X- like levels on n values was obtained from the measured results. The transition from type I to type II was observed at atmosphere in a SL of n = 1 1. It is in good agreement with the calculated result based on Kronig-Penney model. It is found that the pressure coefficient of X-like states decreases with decreasing the n values. And it is explained by a combined effects. The pressure dependence of the levels and luminescence intensities demonstrates that F-X mixing is quite weak.

Paper Details

Date Published: 1 October 1990
PDF: 10 pages
Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20761
Show Author Affiliations
Zhao-Ping Wang, Institute of Semiconductors and National Lab. for Superlattices (China)
Guohua Li, Institute of Semiconductors and National Lab. for Superlattices (China)
De Sheng Jiang, Institute of Semiconductors and National Lab. for Superlattices (China)
He Xiang Han, Institute of Semiconductors and National Lab. for Superlattices (China)
Klaus H. Ploog, Max-Planck-Institut fuer Festkoerperforschung (Germany)


Published in SPIE Proceedings Vol. 1283:
Quantum Well and Superlattice Physics III
Gottfried H. Doehler; Emil S. Koteles; Joel N. Schulman, Editor(s)

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