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Proceedings Paper

Short-wavelength infrared defect emission as probe for degradation effects in diode lasers
Author(s): Martin Hempel; Jens W. Tomm; Fangyu Yue; Mauro A. Bettiati; Thomas Elsaesser
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Paper Abstract

The infrared emission from 980-nm single-mode high power diode lasers is analyzed in the wavelength range from 0.8 to 7.0 μm. A pronounced short-wavelength infrared (SWIR) emission band with a maximum at 1.3 μm is found to originate from defect states located within the waveguide of the devices. The SWIR intensity is verified to represent a measure of the non-equilibrium carrier concentration in the waveguide, allowing for non-destructive waveguide mapping in spatially resolved detection schemes. The potential of this approach is demonstrated by measuring spatially resolved profiles of SWIR emission and correlating them with mid-wavelength infrared thermal emission along the cavity of devices undergoing repeated catastrophic optical damage. The enhancement of SWIR emission in the damaged parts of the cavity is due to a locally enhanced carrier density in the waveguide and allows for in situ analysis of the damage patterns. Moreover, spatial resolved SWIR measurements are a promising tool for device inspecting even in low-power operation regimes.

Paper Details

Date Published: 10 March 2015
PDF: 6 pages
Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93821G (10 March 2015); doi: 10.1117/12.2075859
Show Author Affiliations
Martin Hempel, Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Jens W. Tomm, Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Fangyu Yue, East Chinal Normal Univ. (China)
Mauro A. Bettiati, 3S PHOTONICS S.A.S. (France)
Thomas Elsaesser, Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (Germany)


Published in SPIE Proceedings Vol. 9382:
Novel In-Plane Semiconductor Lasers XIV
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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