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Proceedings Paper

Room temperature performance of mid-wavelength infrared InAsSb nBn detectors
Author(s): Alexander Soibel; Cory J. Hill; Sam A. Keo; Linda Hoglund; David Z. -Y. Ting; Sarath D. Gunapala
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Paper Abstract

In this work we investigate the high temperature performance of mid-wavelength infrared InAsSb-AlAsSb nBn detectors with cut-off wavelengths near 4.5μm. The quantum efficiency of these devices is 35% without antireflection coatings and does not change with temperature in the 77 - 325K temperature range, indicating potential for room temperature operation. The device dark current stays diffusion limited in the 150K-325K temperature range and becomes dominated by generation-recombination processes at lower temperatures. Detector detectivities of D*(λ) = 1x109 (cm Hz0.5/W) at T = 300K and D*(λ) = 5x109 (cm Hz0.5/W) at T = 250K, which is easily achievable with a one stage TE cooler.

Paper Details

Date Published: 8 February 2015
PDF: 10 pages
Proc. SPIE 9370, Quantum Sensing and Nanophotonic Devices XII, 93700M (8 February 2015); doi: 10.1117/12.2075771
Show Author Affiliations
Alexander Soibel, Jet Propulsion Lab. (United States)
Cory J. Hill, Jet Propulsion Lab. (United States)
Sam A. Keo, Jet Propulsion Lab. (United States)
Linda Hoglund, Jet Propulsion Lab. (United States)
David Z. -Y. Ting, Jet Propulsion Lab. (United States)
Sarath D. Gunapala, Jet Propulsion Lab. (United States)


Published in SPIE Proceedings Vol. 9370:
Quantum Sensing and Nanophotonic Devices XII
Manijeh Razeghi; Eric Tournié; Gail J. Brown, Editor(s)

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