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Proceedings Paper

Generation of spectrally-stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier
Author(s): A. Klehr; H. Wenzel; J. Fricke; Frank Bugge; A. Liero; Th. Hoffmann; G. Erbert; G. Tränkle
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Paper Abstract

Semiconductor based sources which emit high-power spectrally stable nearly diffraction-limited optical pulses in the nanosecond range are ideally suited for a lot of applications, such as free-space communications, metrology, material processing, seed lasers for fiber or solid state lasers, spectroscopy, LIDAR and frequency doubling.

Detailed experimental investigations of 975 nm and 800 nm diode lasers based on master oscillator power amplifier (MOPA) light sources are presented. The MOPA systems consist of distributed Bragg reflector lasers (DBR) as master oscillators driven by a constant current and ridge waveguide power amplifiers which can be driven DC and by current pulses.

In pulse regime the amplifiers modulated with rectangular current pulses of about 5 ns width and a repetition frequency of 200 kHz act as optical gates, converting the continuous wave (CW) input beam emitted by the DBR lasers into a train of short optical pulses which are amplified. With these experimental MOPA arrangements no relaxation oscillations in the pulse power occur. With a seed power of about 5 mW at a wavelength of 973 nm output powers behind the amplifier of about 1 W under DC injection and 4 W under pulsed operation, corresponding to amplification factors of 200 (amplifier gain 23 dB) and 800 (gain 29 dB) respectively, are reached. At 800 nm a CW power of 1 W is obtained for a seed power of 40 mW. The optical spectra of the emission of the amplifiers exhibit a single peak at a constant wavelength with a line width < 10 pm in the whole investigated current ranges. The ratios between laser and ASE levels were > 50 dB. The output beams are nearly diffraction limited with beam propagation ratios M2lat ~ 1.1 and M2ver ~ 1.2 up to 4 W pulse power.

Paper Details

Date Published: 10 March 2015
PDF: 10 pages
Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93821I (10 March 2015); doi: 10.1117/12.2075652
Show Author Affiliations
A. Klehr, Ferdinand-Braun-Institut (Germany)
H. Wenzel, Ferdinand-Braun-Institut (Germany)
J. Fricke, Ferdinand-Braun-Institut (Germany)
Frank Bugge, Ferdinand-Braun-Institut (Germany)
A. Liero, Ferdinand-Braun-Institut (Germany)
Th. Hoffmann, Ferdinand-Braun-Institut (Germany)
G. Erbert, Ferdinand-Braun-Institut (Germany)
G. Tränkle, Ferdinand-Braun-Institut (Germany)

Published in SPIE Proceedings Vol. 9382:
Novel In-Plane Semiconductor Lasers XIV
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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