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Proceedings Paper

Influences of resonantly accumulated free electrons on optical absorption and emission in biased double-barrier resonant tunnelling structures
Author(s): N. Sylvain Charbonneau; Jeffrey F. Young; Pawel Hawrylak; Anthony J. SpringThorpe
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Paper Abstract

The photoluminescence (PL) and photoluminescence excitation (PLE) spectra of a GaAs/AlGaAs doublebarrier resonant tunnelling diode have been studied with sub-meV resolution as a function of the applied bias voltage. For voltages which bias the device in the resonant tunnelling regime, a monotonic blue shift of the PLE peak is observed, concomitant with a monotonic red shift of the corresponding PL peak. Over the same range of voltages, the linewidth (FWHM) increases from 4.8 to 6.3 meV in the case of the PL and from 3.6 to 8.7 meV in the case of the PLE. These results are interpreted as representing the influence of the resonantly accumulated electron population in the well region on the heavy hole exciton resonance.

Paper Details

Date Published: 1 October 1990
PDF: 9 pages
Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20756
Show Author Affiliations
N. Sylvain Charbonneau, National Research Council Canada (Canada)
Jeffrey F. Young, National Research Council Canada (Canada)
Pawel Hawrylak, National Research Council Canada (Canada)
Anthony J. SpringThorpe, Bell Northern Research Ltd. (Canada)

Published in SPIE Proceedings Vol. 1283:
Quantum Well and Superlattice Physics III
Gottfried H. Doehler; Emil S. Koteles; Joel N. Schulman, Editor(s)

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