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Proceedings Paper

MBE growth and electronic properties of planar superlattices consisting of grid-inserted heterostructures
Author(s): Masaaki Tanaka; Junichi Motohisa; Hiroyuki Sakaki
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Paper Abstract

We emphasize the importance of fabricating planar superlattice (PSL) structures with the lateral dimension of 100A, in which most carriers are accommodated in sharply defined ground level. Furthermore, we review our recent studies on the molecular beam epitaxial (MBE) growth and electronic properties of novel planar superlattice (PSL) structures, in which an array of monolayer(ML) thick AlAs bars with period of 80-160A is inserted in GaAs layer. These grid inserted heterostructures (GIHSs) are prepared by depositing 0. 5 monolayer of AlAs during the growth of GaAs on misoriented substrates. We have found anisotropic electronic structures reflecting misorientation induced atomic terraces in both optical and electronic properties, which are in good agreement with theory. This demonstrates that the PSL states are formed in our GIHSs.

Paper Details

Date Published: 1 October 1990
PDF: 7 pages
Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20752
Show Author Affiliations
Masaaki Tanaka, Univ. of Tokyo (Japan)
Junichi Motohisa, Research Ctr. for Advanced Science and Technology (Japan)
Hiroyuki Sakaki, Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 1283:
Quantum Well and Superlattice Physics III
Gottfried H. Doehler; Emil S. Koteles; Joel N. Schulman, Editor(s)

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