Share Email Print
cover

Proceedings Paper

Field emission from carbon nanotube films deposited on etched Si
Author(s): I. Stępińska; J. Radomska; H. Wronka; E. Rzepka; M. Kozłowski; E. Czerwosz
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Field emission from carbon nanotubes films prepared on etched silicon is presented. The etched Si surface has hillockslike form. CNTs films were obtained in two-step method consisting of physical vapor deposition and chemical vapor deposition. For some samples CNTs growth mainly on the top of the hillocks. Field emission from these structures were observed and emission current (at 25 V/μm ) was 0.01-0.03mA. The current – voltage characteristics and an interpretation of observed emission were performed on base of Fowler- Nordheim theory. The short-term stability measurement of emission were also performed.

Paper Details

Date Published: 25 November 2014
PDF: 7 pages
Proc. SPIE 9290, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2014, 92901D (25 November 2014); doi: 10.1117/12.2075181
Show Author Affiliations
I. Stępińska, Tele & Radio Research Institute (Poland)
J. Radomska, Tele & Radio Research Institute (Poland)
H. Wronka, Tele & Radio Research Institute (Poland)
E. Rzepka, Tele & Radio Research Institute (Poland)
M. Kozłowski, Tele & Radio Research Institute (Poland)
E. Czerwosz, Tele & Radio Research Institute (Poland)


Published in SPIE Proceedings Vol. 9290:
Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2014
Ryszard S. Romaniuk, Editor(s)

© SPIE. Terms of Use
Back to Top