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Proceedings Paper

PIN photocurrent studies of monolayer SimGen superlattices
Author(s): Vincent Paul Arbet-Engels; R. P. Gamani Karunasiri; Kang Lung Wang
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Paper Abstract

PIN diodes whose intrinsic region s composed of a strained monolayer superlattice (SLS) have been fabricated by molecular beam epitaxy. The optical and geometrical properties of these structures as a function of the substrate orientation have been investigated. Transmission Electron Microscopy (TEM) and X-ray spectroscopy have been used to characterize the crystalline quality of the samples. The absorption spectra have been measured using photocurrent spectroscopy. Optical transitions extending well into the silicon bandgap have been observed. The type of the transition has been analyzed using envelope function approximation and curve fitting procedures.

Paper Details

Date Published: 1 October 1990
PDF: 12 pages
Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20750
Show Author Affiliations
Vincent Paul Arbet-Engels, Univ. of California/Los Angeles (United States)
R. P. Gamani Karunasiri, Univ. of California/Los Angeles (United States)
Kang Lung Wang, Univ. of California/Los Angeles (United States)

Published in SPIE Proceedings Vol. 1283:
Quantum Well and Superlattice Physics III
Gottfried H. Doehler; Emil S. Koteles; Joel N. Schulman, Editor(s)

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