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Proceedings Paper

Photoluminescence analysis of ultrathin quantum wells
Author(s): Mitsuaki Yano; Takanori Iwawaki; Hisakazu Yokose; Akihiko Kawaguchi; Yoshio Iwai; Masataka Inoue
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Paper Abstract

Three types of ultrathin single quantum well structure grown by MBE , GaAs/InAs/GaAs (type I), GaAs/GaSb/GaAs (typell , staggered) and GaSb/InAs/GaSb (type II , misaligned) have been studied by photolusinescence (PL) measurements to understand the band alignment and effects of lattice strain at the interface. Observed PL spectra are discussed in conjunction with the interface structure probed by RHEED analysis during the MBE growth. The well width dependence of PL energy is cospared with the theoretical results based on a finite potential well model.

Paper Details

Date Published: 1 October 1990
PDF: 8 pages
Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20749
Show Author Affiliations
Mitsuaki Yano, Osaka Institute of Technology (Japan)
Takanori Iwawaki, Osaka Institute of Technology (Japan)
Hisakazu Yokose, Osaka Institute of Technology (Japan)
Akihiko Kawaguchi, Osaka Institute of Technology (Japan)
Yoshio Iwai, Osaka Institute of Technology (Japan)
Masataka Inoue, Osaka Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 1283:
Quantum Well and Superlattice Physics III
Gottfried H. Doehler; Emil S. Koteles; Joel N. Schulman, Editor(s)

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