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Proceedings Paper

Al-doped MgZnO/p-AlGaN heterojunction and their application in ultraviolet photodetectors
Author(s): Kuang-Po Hsueh; Po-Wei Cheng; Wen-Yen Lin; Hsien-Chin Chiu; Jinn-Kong Sheu; Yu-Hsiang Yeh
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Paper Abstract

In this study, n-type Al-doped MgxZn1-xO (AMZO) films were deposited onto p-Al0.08Ga0.92N by using radiofrequency magnetron sputtering followed by annealing at 800°C in nitrogen ambient for 60 s. The film was highly transparent and had transmittances exceeding 95% in the visible region and a sharp absorption edge visible in the ultraviolet region. A high leakage current was obtained in the current-voltage (I-V) characteristics of the GMZO/AlGaN n-p junction diode. The AMZO/AlGaN photodetector based on the AMZO film exhibited a dark current of 1.56 μA at Vbias = -3V. The peak responsivity of the photodetector was approximately 200 nm and a cutoff wavelength was observed at approximately 250 nm.

Paper Details

Date Published: 9 January 2015
PDF: 4 pages
Proc. SPIE 9444, International Seminar on Photonics, Optics, and Its Applications (ISPhOA 2014), 94440K (9 January 2015); doi: 10.1117/12.2074817
Show Author Affiliations
Kuang-Po Hsueh, Vanung Univ. (Taiwan)
Po-Wei Cheng, Vanung Univ. (Taiwan)
Wen-Yen Lin, Vanung Univ. (Taiwan)
Hsien-Chin Chiu, Chang Gung Univ. (Taiwan)
Jinn-Kong Sheu, National Cheng Kung Univ. (Taiwan)
Yu-Hsiang Yeh, National Cheng Kung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 9444:
International Seminar on Photonics, Optics, and Its Applications (ISPhOA 2014)
Aulia Nasution, Editor(s)

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