Share Email Print

Proceedings Paper

Electronic structure and optical properties of strained-layer superlattices
Author(s): Geoffrey Duggan
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The essential elements of strain effects on the electronic structure of lnGa1As-(AlGa)As on GaAs are elucidated. Attention is focused on the optical properties of quantum wells and superlattices(SL) with In fractions <0.12. Photoluminescence and photoluminescence excitation spectroscopy at '-4K has revealed sharp exciton features and allowed us to measure the el-hhl binding energy versus well width, identify Ln =0 and transitions and follow the development of SL minibands. Comparison with envelope function calculations suggests the band offset ratio remains constant (67:33) up to x=O.12.

Paper Details

Date Published: 1 October 1990
PDF: 15 pages
Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20747
Show Author Affiliations
Geoffrey Duggan, Philips Research Labs. (United Kingdom)

Published in SPIE Proceedings Vol. 1283:
Quantum Well and Superlattice Physics III
Gottfried H. Doehler; Emil S. Koteles; Joel N. Schulman, Editor(s)

© SPIE. Terms of Use
Back to Top