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Paper Abstract
The essential elements of strain effects on the electronic structure of lnGa1As-(AlGa)As on GaAs are
elucidated. Attention is focused on the optical properties of quantum wells and superlattices(SL) with In
fractions <0.12. Photoluminescence and photoluminescence excitation spectroscopy at '-4K has revealed
sharp exciton features and allowed us to measure the el-hhl binding energy versus well width, identify
Ln =0 and transitions and follow the development of SL minibands. Comparison with envelope function
calculations suggests the band offset ratio remains constant (67:33) up to x=O.12.
Paper Details
Date Published: 1 October 1990
PDF: 15 pages
Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20747
Published in SPIE Proceedings Vol. 1283:
Quantum Well and Superlattice Physics III
Gottfried H. Doehler; Emil S. Koteles; Joel N. Schulman, Editor(s)
PDF: 15 pages
Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20747
Show Author Affiliations
Geoffrey Duggan, Philips Research Labs. (United Kingdom)
Published in SPIE Proceedings Vol. 1283:
Quantum Well and Superlattice Physics III
Gottfried H. Doehler; Emil S. Koteles; Joel N. Schulman, Editor(s)
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