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Proceedings Paper

Delocalization of the excitons via the X-valley in GaAs/A1As quantum wells
Author(s): Mitra B. Dutta; Doran D. Smith; Peter G. Newman; Xichun C. Liu; Athos P. Petrou
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Paper Abstract

The results of magnetoreflection, photoluminescence and photoluminescence excitation experiments are reported in GaAs-AlAs multiple quantum wells of different well widths, demonstrating the influence of the X-band in the AlAs on the electron levels in GaAs. Evidence is presented for the existence of an exciton formed from a delocalized electron, and for the conduction of electrons from narrow wells to wide wells via the X-band of AlAs.

Paper Details

Date Published: 1 October 1990
PDF: 7 pages
Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20746
Show Author Affiliations
Mitra B. Dutta, U.S. Army Electronic Technology and Devices Lab. (United States)
Doran D. Smith, U.S. Army Electronic Technology and Devices Lab. (United States)
Peter G. Newman, U.S. Army Electronic Technology and Devices Lab. (United States)
Xichun C. Liu, SUNY/Buffalo (United States)
Athos P. Petrou, SUNY/Buffalo (United States)


Published in SPIE Proceedings Vol. 1283:
Quantum Well and Superlattice Physics III
Gottfried H. Doehler; Emil S. Koteles; Joel N. Schulman, Editor(s)

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