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Proceedings Paper

Ray-tracing method to analyze and quantify the light enhancement around subsurface defects in transparent materials
Author(s): Rong Wu; Dongfeng Zhao; Lei Zhang; Ping Shao; Neng Hua; Zunqi Lin
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Paper Abstract

Laser-induced damage (LID) to optical glass has become a growing problem in high-power laser systems. It is well known that the main reason of glass being damaged is due to defects and impurities in the material. Damage caused by subsurface defects (SSDs) is especially common in actual system running. Accordingly, in the presence of SSDs, a simple and alternative calculation method is developed to evaluate the enhancement of light field around the incident and exit surface. This ray tracing approach, based on the classical optics theory, is very direct and clear to show the optical phenomena of light intensity enhancement. Some basic SSD shapes have been studied and investigated here, which reveals the importance and boundary condition of controlling the size and density of SSDs in grinding and polishing process. Finally, to achieve optimal breadth depth ratio, the least etching amounts by hydrofluoric (HF) acid is investigated. The theoretical analysis and simulation results provide an appropriate range of removal amounts, which is very important in the HF etching process.

Paper Details

Date Published: 10 December 2014
PDF: 6 pages
Proc. SPIE 9266, High-Power Lasers and Applications VII, 926609 (10 December 2014); doi: 10.1117/12.2074559
Show Author Affiliations
Rong Wu, Shanghai Institute of Optics and Fine Mechanics (China)
Dongfeng Zhao, Shanghai Institute of Optics and Fine Mechanics (China)
Univ. of Chinese Academy of Sciences (China)
Lei Zhang, Shanghai Institute of Optics and Fine Mechanics (China)
Ping Shao, Shanghai Institute of Optics and Fine Mechanics (China)
Neng Hua, Shanghai Institute of Optics and Fine Mechanics (China)
Zunqi Lin, Shanghai Institute of Optics and Fine Mechanics (China)

Published in SPIE Proceedings Vol. 9266:
High-Power Lasers and Applications VII
Ruxin Li; Upendra N. Singh; Robert F. Walter, Editor(s)

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