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Proceedings Paper

Growth control of Ga(As)Sb quantum dots (QD) on GaAs with reflectance anisotropy spectroscopy (RAS)
Author(s): Johannes H. Strassner; Johannes Richter; Thomas H. Loeber; Henning Fouckhardt
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Paper Abstract

Ga(As)Sb quantum dots (QDs) are grown on GaAs substrate in the Stranski-Krastanov mode. The molecular beam epitaxial (MBE) growth is monitored by reflectance anisotropy spectroscopy (RAS). For certain photon energies of the light used for RAS, the RAS signal values for GaAs layers, GaSb layers, and Ga(As)Sb QD surface morphologies can clearly be distinguished. The finding verifies that RAS is a valuable tool to identify growth of these QDs.

Paper Details

Date Published: 25 September 2014
PDF: 8 pages
Proc. SPIE 9288, Photonics North 2014, 92880F (25 September 2014); doi: 10.1117/12.2074530
Show Author Affiliations
Johannes H. Strassner, Technische Univ. Kaiserslautern (Germany)
Johannes Richter, Technische Univ. Kaiserslautern (Germany)
Thomas H. Loeber, Technische Univ. Kaiserslautern (Germany)
Henning Fouckhardt, Technische Univ. Kaiserslautern (Germany)


Published in SPIE Proceedings Vol. 9288:
Photonics North 2014
Steve MacLean; David V. Plant, Editor(s)

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