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Proceedings Paper

Stability in peak emission wavelength in strain-coupled multilayer InAs/GaAs quantum dot heterostructures when subjected to high-temperature rapid thermal annealing
Author(s): Saikalash Shetty; Sourav Adhikary; Hemant Ghadi; Subhananda Chakrabarti
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Paper Abstract

In quantum dot laser and solar cell structures, high temperature is required for the growth of cladding or window layer. Therefore to check the thermal stability in emission peak in high temperature strain coupled InAs/GaAs QDs are grown by MBE capped with two different type of spacer layer- InGaAs and InAlGaAs. Photoluminescence spectra shows multimodal distribution of QDs. Till 700oC annealing temperature, no shift in peak emission wavelength is observed for InGaAs capped sample. The vertical strain prevents the inter-diffusion by maintaining a strain relaxed state due to coupling. For quaternary InAlGaAs capped QDs this stability is observed till 800oC.

Paper Details

Date Published: 27 February 2015
PDF: 8 pages
Proc. SPIE 9373, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII, 93730I (27 February 2015); doi: 10.1117/12.2074088
Show Author Affiliations
Saikalash Shetty, Indian Institute of Technology Bombay (India)
Sourav Adhikary, Indian Institute of Technology Bombay (India)
Hemant Ghadi, Indian Institute of Technology Bombay (India)
Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)


Published in SPIE Proceedings Vol. 9373:
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII
Diana L. Huffaker; Holger Eisele, Editor(s)

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