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Proceedings Paper

Narrow linewidth 1.55μm directly modulated distributed-feedback laser
Author(s): Jin-Jin Guo; Jianguo Liu; Ninghua Zhu; Wei Chen; Wenhui Sun; Ningbo Huang; Qi Wang
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Paper Abstract

We fabricated a narrow linewidth 1.55μm directly-modulated distributed-feedback (DFB) laser. The laser exhibits an output power of 14mW at 100mA, flat frequency response with -3 dB bandwidth of 18 GHz, the third-order intermodulation distortion (IMD3) with 39.8dBm, narrow optical linewidth with 181kHz, and RIN below -135.7dB/Hz in the 0.1-10GHz range along with the high side-mode suppression ratio (<52dB). We also experimentally verified the modulation bandwidth, linearity, and linewidth is related to the bias current. The characteristics of the laser, namely sufficient modulation bandwidth, high linearity, low relative intensity noise (RIN) and narrow linewidth, make it the perfect candidates for high dynamic directly modulated analog optical link.

Paper Details

Date Published: 3 December 2014
PDF: 8 pages
Proc. SPIE 9267, Semiconductor Lasers and Applications VI, 92670N (3 December 2014); doi: 10.1117/12.2073979
Show Author Affiliations
Jin-Jin Guo, Institute of Semiconductors (China)
Jianguo Liu, Institute of Semiconductors (China)
Ninghua Zhu, Institute of Semiconductors (China)
Wei Chen, Institute of Semiconductors (China)
Wenhui Sun, Institute of Semiconductors (China)
Ningbo Huang, Institute of Semiconductors (China)
Qi Wang, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 9267:
Semiconductor Lasers and Applications VI
Ninghua Zhu; Werner H. Hofmann, Editor(s)

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