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Proceedings Paper

An asymmetric sampled Bragg grating structure for improving semiconductor laser efficiency
Author(s): Yating Zhou; Gang Wang; Hong Zhu; Jun Lu; Xiangfei Chen
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Paper Abstract

An asymmetric sampled Bragg grating (SBG) semiconductor laser, which consists of two sections with same length but different sampling duty cycle, can be introduced an arbitrary equivalent-phase-shift (EPS) into its center. At the same time, to adjust the sampling duty cycles in the two sections as different magnitude, the studied laser can output more lasing power from its one facet than that from the other one. That is to say, this method can be used to design and fabricate the EPS SBG semiconductor laser with higher output efficiency.

Paper Details

Date Published: 3 December 2014
PDF: 7 pages
Proc. SPIE 9267, Semiconductor Lasers and Applications VI, 926713 (3 December 2014); doi: 10.1117/12.2073460
Show Author Affiliations
Yating Zhou, Changzhou Institute of Technology (China)
Gang Wang, Changzhou Institute of Technology (China)
Hong Zhu, Changzhou Institute of Technology (China)
Jun Lu, Changzhou Institute of Technology (China)
Xiangfei Chen, Nanjing Univ. (China)

Published in SPIE Proceedings Vol. 9267:
Semiconductor Lasers and Applications VI
Ninghua Zhu; Werner H. Hofmann, Editor(s)

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