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Proceedings Paper

Defect formation energy for charge states and electrophysical properties of CdMnTe
Author(s): M. A. Mehrabova; H. R. Nuriyev; H. S. Orujov; A. M. Nazarov; R. M. Sadigov; V. N. Poladova
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Paper Abstract

In this work the results of investigation of Cd1-xMnxTe (x=0.01, 0.03, 0.05) solid solutions synthesis and their thin films' obtaining technology have been represented. Epitaxial films of monocrystalline Cd1-хMnхTe semimagnetic semiconductors were obtained on mica substrate by MBC method. Lattice parameters and crystal structure of samples were defined with X-ray diffraction method. It has been studied the electrophysical parameters. Defect formation energy has been calculated for Cd1-хMnхTe semimagnetic semiconductors by Ab-initio method using Atomistix Toolkit program. We have studied the dependence of defect formation energy on supercell size for charged vacancy and interstitial defects in Cd1-хMnхTe thin films.

Paper Details

Date Published: 6 January 2015
PDF: 10 pages
Proc. SPIE 9450, Photonics, Devices, and Systems VI, 94500Q (6 January 2015); doi: 10.1117/12.2073343
Show Author Affiliations
M. A. Mehrabova, Institute of Radiation Problems (Azerbaijan)
H. R. Nuriyev, Institute of Physics (Azerbaijan)
H. S. Orujov, Institute of Physics (Azerbaijan)
A. M. Nazarov, Institute of Physics (Azerbaijan)
R. M. Sadigov, Institute of Physics (Azerbaijan)
V. N. Poladova, Institute of Radiation Problems (Azerbaijan)


Published in SPIE Proceedings Vol. 9450:
Photonics, Devices, and Systems VI
Pavel Tománek; Dagmar Senderáková; Petr Páta, Editor(s)

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