Share Email Print
cover

Proceedings Paper

Properties of InGaN P-I-N ultraviolet detector
Author(s): Yidan Lu; Yan Zhang; Xiang-yang Li
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The fabrication and characterization of InGaN ultraviolet photodetector were reported in this work. The effects of thermal annealing were investigated on the properties of ohmic contact. Experiments showed that the zero bias resistance was lowest when the sample was annealed at 550 degrees Celsius for 5 minutes. The current-voltage (I-V) curve showed that current at zero bias was 3.70×10-13A and the resistance was 4.53×1010 Ω. A flat band spectral response was achieved in the 360nm~390nm. The detector displayed an unbiased response of 0.22A/W at 378 nm, corresponding to an internal quantum efficiency of 88%. R0A values up to 1.3×108Ω·cm2 was obtained corresponding to D*=1.97×1013cm•Hz1/2•W-1.

Paper Details

Date Published: 2 September 2014
PDF: 7 pages
Proc. SPIE 9284, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronics Materials and Devices for Sensing and Imaging, 92840P (2 September 2014); doi: 10.1117/12.2073317
Show Author Affiliations
Yidan Lu, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Yan Zhang, Shanghai Institute of Technical Physics (China)
Xiang-yang Li, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 9284:
7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronics Materials and Devices for Sensing and Imaging
Yadong Jiang; Junsheng Yu; Bernard Kippelen, Editor(s)

© SPIE. Terms of Use
Back to Top