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Proceedings Paper

The study of 3.2-mJ picosecond regenerative amplifier at 2 kHz
Author(s): Zhen-ao Bai; Zhong-wei Fan; Fu-qiang Lian; Zhen-xu Bai; Zhi-jun Kan; Jing Zhang; Jia-zan Wang
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Paper Abstract

We report on a high energy laser diode (LD) side-continuous-pumped Nd:YAG (yttrium aluminum garnet) picosecond regenerative amplifier. The mode-locking picosecond oscillator is used as seed source with 31.3 ps pulse width, 150 mW average power and 1064.4 nm center wavelengths at the repetition frequency of 86 MHz. For the amplifier system, average output power of 6.4 W and 10.8 W are achieved at repetition frequency of 2 kHz and 4.5 kHz, which corresponds to output pulse energy of 3.2 mJ and 2.4 mJ respectively. The regenerative amplifier designed has high compact and high stability.

Paper Details

Date Published: 9 December 2014
PDF: 6 pages
Proc. SPIE 9294, International Symposium on Optoelectronic Technology and Application 2014: Development and Application of High Power Lasers, 92940U (9 December 2014); doi: 10.1117/12.2073288
Show Author Affiliations
Zhen-ao Bai, Beijing GK Laser Technology Co., Ltd. (China)
Zhong-wei Fan, Beijing GK Laser Technology Co., Ltd. (China)
Academy of Opto-Electronics (China)
Fu-qiang Lian, Academy of Opto-Electronics (China)
Zhen-xu Bai, Harbin Institite of Technology (China)
Zhi-jun Kan, Academy of Opto-Electronics (China)
Jing Zhang, Beijing GK Laser Technology Co., Ltd. (China)
Jia-zan Wang, Beijing GK Laser Technology Co., Ltd. (China)


Published in SPIE Proceedings Vol. 9294:
International Symposium on Optoelectronic Technology and Application 2014: Development and Application of High Power Lasers
Guofan Jin; Songlin Zhuang; Jennifer Liu, Editor(s)

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