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Proceedings Paper

Optical nonlinearities of InN by reflection Z-scan technique
Author(s): Jiping Jia; Yong Yang; Yunyi Yang; Zhengguo Xiao; Yu Fang; Yinglin Song
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Paper Abstract

The optical nonlinearities of semiconductor bulk material Indium nitride (InN) have been investigated by Reflection Z-scan technique (RZ-scan) at the wavelength of 532nm with 21ps laser pulse. Top hat beam is used in order to get high spatial quality. Different from the normal RZ-scan device, instead of moving the sample, the lens before the sample is moved along z-axis. This can guarantee the stability of the spot on the surface of the sample and the measurement accuracy. The measurement of nonlinear refraction without aperture should be tested first, and then with a small aperture nonlinear absorption coefficient is measured. The experimental results show that InN has positive nonlinear refraction and saturable absorption effect. Nonlinear refraction and absorption coefficient are obtained by fitting theoretical simulation with experimental data.

Paper Details

Date Published: 3 December 2014
PDF: 6 pages
Proc. SPIE 9297, International Symposium on Optoelectronic Technology and Application 2014: Laser and Optical Measurement Technology; and Fiber Optic Sensors, 92971Q (3 December 2014); doi: 10.1117/12.2073046
Show Author Affiliations
Jiping Jia, Soochow Univ. (China)
Yong Yang, Soochow Univ. (China)
Yunyi Yang, Soochow Univ. (China)
Zhengguo Xiao, Harbin Institute of Technology (China)
Yu Fang, Soochow Univ. (China)
Yinglin Song, Soochow Univ. (China)
Harbin Institute of Technology (China)


Published in SPIE Proceedings Vol. 9297:
International Symposium on Optoelectronic Technology and Application 2014: Laser and Optical Measurement Technology; and Fiber Optic Sensors
Jurgen Czarske; Shulian Zhang; David Sampson; Wei Wang; Yanbiao Liao, Editor(s)

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