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Proceedings Paper

Analysis of thermodynamic effect in Si irradiated by pulsed-laser
Author(s): Ming Guo; Guangyong Jin; Mingxin Li; Yao Ma; Boshi Yuan; Huadong Yu
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Paper Abstract

According to the heat conduction equation, thermoelastic equation and boundary conditions of finite, using the finite element method(FEM), established the three-dimensional finite element calculation model of thermal elastic ,numerical simulation the transient temperature field and stress field distribution of the single crystal silicon materials by the pulsing laser irradiation, and analytic solution the temperature distribution and stress distribution of laser irradiation on the silicon material , and analyzes the different parameters such as laser energy, pulse width, pulse number influence on temperature and stress, and the intrinsic damage mechanism of pulsed laser irradiation on silicon were studied. The results show that the silicon material is mainly in hot melt under the action of ablation damage.According to the irradiation of different energy and different pulse laser ,we can obtain the center temperature distribution, then get the law of the change of temperature with the variation of laser energy and pulse width in silicon material; according to the principal stress and shear stress distribution in 110 direction with different energy and different pulse, we can get the law of the change of stress distribution with the variation of laser energy and pulse width ;according to the principal stress distribution of single pulse and pulse train in 110 direction, we can get the law of the change of stress with pulse numbers in silicon.When power density of laser on optical material surface (or energy density) is the damage threshold, the optical material surface will form a spontaneous, periodic, and permanent surface ripple, it is called periodic surface structure laser induced (LIPSS).It is the condensed optical field of work to generate low dimensional quantum structures by laser irradiation on Si samples. The pioneering work of research and development and application of low dimensional quantum system has important academic value.The result of this paper provides theoretical foundation not only for research of theories of Si and substrate thermal stress damage and its numerical simulation under laser radiation but also for pulse laser technology and widening its application scope.

Paper Details

Date Published: 18 December 2014
PDF: 6 pages
Proc. SPIE 9295, International Symposium on Optoelectronic Technology and Application 2014: Laser Materials Processing; and Micro/Nano Technologies, 92950S (18 December 2014); doi: 10.1117/12.2073029
Show Author Affiliations
Ming Guo, Changchun Univ. of Science and Technology (China)
Guangyong Jin, Changchun Univ. of Science and Technology (China)
Mingxin Li, Changchun Univ. of Science and Technology (China)
Yao Ma, Changchun Univ. of Science and Technology (China)
Boshi Yuan, Changchun Univ. of Science and Technology (China)
Huadong Yu, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 9295:
International Symposium on Optoelectronic Technology and Application 2014: Laser Materials Processing; and Micro/Nano Technologies
Guofan Jin; Songlin Zhuang; Jennifer Liu, Editor(s)

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