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Proceedings Paper

Investigation on the defect structure and optical damage resistance of In:Tm:LiNbO3 crystals with different doping concentrations of In3+
Author(s): Zhen Huang; Jianqiang Tong; Xin Zhang; Jie Gao; Xiaoling Zhang; Zhaopeng Xu
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Paper Abstract

In:Tm:LiNbO3 crystals were grown by the Czochralski technique with fixed concentrations of Tm2O3 and differing concentrations of In2O3. Their ultraviolet-visible absorption spectra were measured in order to investigate their defect structures and their optical damage resistance was characterized by the transmission light spot distortion method. The results show that the optical damage resistance of the In:Tm:LiNbO3 crystals improves with the doping concentration of In2O3 increasing. The dependence of the optical damage resistance on the defect structure of In:Tm:LiNbO3 crystals is discussed in detail.

Paper Details

Date Published: 18 December 2014
PDF: 4 pages
Proc. SPIE 9295, International Symposium on Optoelectronic Technology and Application 2014: Laser Materials Processing; and Micro/Nano Technologies, 92950R (18 December 2014); doi: 10.1117/12.2072972
Show Author Affiliations
Zhen Huang, Yanshan Univ. (China)
Jianqiang Tong, Yanshan Univ. (China)
Xin Zhang, Yanshan Univ. (China)
Jie Gao, Yanshan Univ. (China)
Xiaoling Zhang, Yanshan Univ. (China)
Zhaopeng Xu, Yanshan Univ. (China)


Published in SPIE Proceedings Vol. 9295:
International Symposium on Optoelectronic Technology and Application 2014: Laser Materials Processing; and Micro/Nano Technologies
Guofan Jin; Songlin Zhuang; Jennifer Liu, Editor(s)

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