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Proceedings Paper

320×256 InGaAs solid state low-light devices
Author(s): Yan-li Shi; Qiang Lu; Rui Hu; Gong-rong Deng; Zhu-jun Chu; Long Li; Yao-hong Qian; Yun-xiang Feng
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Paper Abstract

The InGaAs devices has been chosen as new candidate of solid-state low-light devices because of advantages such as wide response wavelength, high quantum efficiency, high device performance, digitalized readout, high temperature operation, high reliability and long lifetime. It has gained vital development and application in the world. 320×256 InGaAs solid-state low-light devices has been prepared and studied, the p-i-n material structure was grown by MOCVD system. The mesa device structure was chosen and fabricated by inductively coupled plasma (ICP) method. The detector chip and CMOS readout integrated circuit was bonded by flip-chip bonding. The FPAs was packaged to Dewar which temperature could be changed by temperature controller. Both performances of single element device and focal plane arrays were studied in detail. Very simple optics lens was adopted to show the imaging of 1.064μm laser spot and hand. Study results disclose feasible material growth, devices processing and high temperature operation characteristics of InGaAs devices.

Paper Details

Date Published: 20 November 2014
PDF: 7 pages
Proc. SPIE 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications, 930004 (20 November 2014); doi: 10.1117/12.2072895
Show Author Affiliations
Yan-li Shi, North Night Vision Technology Group Co., Ltd. (China)
Qiang Lu, North Night Vision Technology Group Co., Ltd. (China)
Rui Hu, North Night Vision Technology Group Co., Ltd. (China)
Gong-rong Deng, North Night Vision Technology Group Co., Ltd. (China)
Zhu-jun Chu, North Night Vision Technology Group Co., Ltd. (China)
Long Li, North Night Vision Technology Group Co., Ltd. (China)
Yao-hong Qian, North Night Vision Technology Group Co., Ltd. (China)
Yun-xiang Feng, North Night Vision Technology Group Co., Ltd. (China)


Published in SPIE Proceedings Vol. 9300:
International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications
Mircea Guina; Haimei Gong; Zhichuan Niu; Jin Lu, Editor(s)

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