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Proceedings Paper

Single-platform Si photonic components for mid-infrared sensing and chemical imaging
Author(s): Ventsislav Lavchiev; Grant Ritchie; James Kirkbride; Ursula Hedenig; Thomas Grille; Peter Irsigler; Bernhard Lendl; Bernhard Jakoby
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Paper Abstract

Basic challenges for mid-infrared (MIR) Si photonics are developing of appropriate sources and detectors, detection sensitivity, size minimization and downscaling to a single-platform, spectral tunability. We address such challenges via proper design, modeling and material choice for a series of photonic structures. Our research is done in three steps: modeling, fabrication, characterization. The modeling starts with ellipsometry investigation of Si, Si3N4 and SiOx, to estimate the materials’ complex dielectric function ε =ε r + i ×ε i in MIR. The technique showed Si and SiN optical transparency in the range λ=4.5-6.5 μm, and negligible absorption for SiOx, which makes it appropriate for MIR photonics (Figure 1). Figure 2 demonstrates the device concept: MIR source emits electromagnetic field, which is coupled to/from a Siwaveguide (WG) via grating couplers. The WG performs as interaction medium between the propagating field and fluid atop the WG. It results in field attenuation, measured at the output, due to partial absorption by the fluid. To achieve efficient device performance, size, spectral tuning and evaluation of the attenuation, the structures were investigated by means of 3D photonic simulations. The structures were fabricated via the 200-mm-wafer-CMOS technology in Infineon involving deep-UV lithography and Bosch etching. PhC structures were fabricated as holes in a Si-slab with SiOx-filling to avoid residuals from the fluid into the holes, which modifies the photonic band gap and device sensitivity. Figure 3 shows SEM images of the structures. Our paper discusses the design, material characterization, single-platform integration of the source, WG and detector and first experiments with recently fabricated prototypes.

Paper Details

Date Published: 5 September 2014
PDF: 7 pages
Proc. SPIE 9200, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VIII, 920010 (5 September 2014); doi: 10.1117/12.2072632
Show Author Affiliations
Ventsislav Lavchiev, Johannes Kepler Univ. Linz (Austria)
Grant Ritchie, Univ. of Oxford (United Kingdom)
James Kirkbride, Univ. of Oxford (United Kingdom)
Ursula Hedenig, Infineon Technologies Austria AG (Austria)
Thomas Grille, Infineon Technologies Austria AG (Austria)
Peter Irsigler, Infineon Technologies Austria AG (Austria)
Bernhard Lendl, Technische Univ. Wien (Austria)
Bernhard Jakoby, Johannes Kepler Univ. Linz (Austria)


Published in SPIE Proceedings Vol. 9200:
Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VIII
Shizhuo Yin; Ruyan Guo, Editor(s)

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