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Proceedings Paper

Hole tunneling in GaAs/AlGaAs heterostructures: coherent versus incoherent resonant tunneling
Author(s): Karl Leo; Jagdeep Shah; James P. Gordon; Theodore C. Damen; David A. B. Miller; Charles W. Tu; John E. Cunningham; Jill E. Henry
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Paper Abstract

We study resonant and nonresonant hole tunneling in an asymmetric double quantum well structure by picosecond timeresolved photoluminescence. The tunneling times are directly determined by studying the luminescence decay time in one of the wells. Various hole levels in the two quantum wells are brought in resonance by applying an electric field to the doped layers which clad the inirinsic region containing the quantum well structures. The luminescence decay shows a sharp resonance due to tunneling of carriers when two heavy-hole levels are brought in resonance. The tunneling time at resonance, however, is much longer than expected from a simple theoretical model assuming a coherent tunneling process. We develop a quantitative theory of resonant tunneling under the influence of scattering and relaxation processes. The results predict large increases in the tunneling times in good agreement with the experimental observations.

Paper Details

Date Published: 1 October 1990
PDF: 10 pages
Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20726
Show Author Affiliations
Karl Leo, AT&T Bell Labs. (United States)
Jagdeep Shah, AT&T Bell Labs. (United States)
James P. Gordon, AT&T Bell Labs. (United States)
Theodore C. Damen, AT&T Bell Labs. (United States)
David A. B. Miller, AT&T Bell Labs. (United States)
Charles W. Tu, AT&T Bell Labs. (United States)
John E. Cunningham, AT&T Bell Labs. (United States)
Jill E. Henry, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1283:
Quantum Well and Superlattice Physics III
Gottfried H. Doehler; Emil S. Koteles; Joel N. Schulman, Editor(s)

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