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Proceedings Paper

Negative tone development process for ArF immersion extension
Author(s): Kosuke Koshijima; Michihiro Shirakawa; So Kamimura; Keita Katou
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Paper Abstract

A negative tone imaging with application of new developer to conventional ArF immersion resist materials is proposed for narrow trench pattern formation, which is effective to the double trench process that is one of the candidates of double patterning process for semiconductor devices below 20nm node. Significantly better resolution on narrow trench pattern and small CH pattern was observed with this negative tone development compared to positive tone development. These results suggest that this negative tone development process is one of the promising candidates for double trench process.

Paper Details

Date Published: 8 October 2014
PDF: 6 pages
Proc. SPIE 9235, Photomask Technology 2014, 92350O (8 October 2014); doi: 10.1117/12.2072470
Show Author Affiliations
Kosuke Koshijima, FUJIFILM Corp. (Japan)
Michihiro Shirakawa, FUJIFILM Corp. (Japan)
So Kamimura, FUJIFILM Corp. (Japan)
Keita Katou, FUJIFILM Corp. (Japan)


Published in SPIE Proceedings Vol. 9235:
Photomask Technology 2014
Paul W. Ackmann; Naoya Hayashi, Editor(s)

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