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Proceedings Paper

A theoretical estimation model of response speed for photovoltaic HgCdTe infrared detectors
Author(s): Xiao Wang; Zelin Shi
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Paper Abstract

Doping concentration is the key factor affecting the performance of infrared detectors. Based on photovoltaic HgCdTe infrared photodetectors, in order to compute the response speed in engineering applications precisely and fastly, a theoretical estimation model is proposed. At first, according to continuity equation of PN junctions that are radiated by infrared radiation, the mechanism of PN junctions in a typical working situation is analyzed and an approximate solving method is established, which shows the analytic expression of the relationship between the response speed of photovoltaic infrared photodetectors and the doping concentration s. Then the response speed of photovoltaic HgCdTe infrared photodetectors is compared to that of photoconductive photodetectors. In the end, the error of the estimation model is checked, which is done through numerical analysis. The results indicate that the response speed rises with the doping concentration increasing as the error increases, the estimation model proposed brings the maximum error of 5.9%, if the doping concentration is 1021 per cubic centimeter.

Paper Details

Date Published: 20 November 2014
PDF: 7 pages
Proc. SPIE 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications, 93001P (20 November 2014); doi: 10.1117/12.2072435
Show Author Affiliations
Xiao Wang, Shenyang Institute of Automation (China)
Univ. of Chinese Academy of Sciences (China)
Key Lab. of Optical-Electronic Information Processing (China)
Zelin Shi, Shenyang Institute of Automation (China)
Key Lab. of Optical-Electronic Information Processing (China)


Published in SPIE Proceedings Vol. 9300:
International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications
Mircea Guina; Haimei Gong; Zhichuan Niu; Jin Lu, Editor(s)

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