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Proceedings Paper

Very long-wavelength (~20μm) InAs/GaSb superlattice infrared detector with double InSb-like interfaces
Author(s): Dongwei Jiang; Fengyun Guo; Wei Xiang; Yuehong Hao; Guowei Wang; Yingqiang Xu; Qingjiang Yu; Zhichuan Niu; Liancheng Zhao
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Paper Abstract

Optimization of growth parameters for type-II 17MLs InAs/8MLs GaSb strained layer superlattices (SLS) (λcut-off~20 μm at 77K), grown on GaSb substrates by solid source molecular beam epitaxy (MBE), has been undertaken. Both the GaSb on InAs interface and the InAs on GaSb interface were inserted with InSb interfaces using migration enhanced epitaxy (MEE) method to balance the lattice mismatch. The influence of the effect of the thickness of InSb layer on the properties of the superlattice has been investigated. We demonstrate the structural properties of these SLS structures, using high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and high-resolution transmission electron microscopy (TEM). Optimized growth parameters were then used to grow SLS detectors with the active region of 2-μm-thick, which demonstrated full-width half-maximum (FWHM) of 22 arcsec for the first SLS satellite peak and nearly zero lattice mismatch between zero-order SLS peak and GaSb substrate. The cut-off wavelength of the detector is 20 μm at 77K measured by Fourier Transform Infrared (FTIR) spectrometer with the quantum efficiency of 10% and the Johnson noise limited detectivity reached 2.8×1010 cm Hz1/2/W at 10.55μm under -75mV bias voltage.

Paper Details

Date Published: 20 November 2014
PDF: 7 pages
Proc. SPIE 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications, 93001L (20 November 2014); doi: 10.1117/12.2072187
Show Author Affiliations
Dongwei Jiang, Harbin Institute of Technology (China)
Fengyun Guo, Harbin Institute of Technology (China)
Wei Xiang, Institute of Semiconductors (China)
Yuehong Hao, Institute of Semiconductors (China)
Guowei Wang, Institute of Semiconductors (China)
Yingqiang Xu, Institute of Semiconductors (China)
Qingjiang Yu, Harbin Institute of Technology (China)
Zhichuan Niu, Institute of Semiconductors (China)
Liancheng Zhao, Harbin Institute of Technology (China)


Published in SPIE Proceedings Vol. 9300:
International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications
Mircea Guina; Haimei Gong; Zhichuan Niu; Jin Lu, Editor(s)

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