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Proceedings Paper

Sulfurizing method for passivation used in InAs/GaSb type-II superlattice photodetectors
Author(s): Hongyue Hao; Wei Xiang; Guowei Wang; Dongwei Jiang; Yingqiang Xu; Zhengwei Ren; Zhenhong He; Zhichuan Niu
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Paper Abstract

Since InAs/GaSb type-II superlattices (T2SL) were first proposed as infrared (IR) sensing materials, T2SL mid-wave IR (MWIR) and long-wave IR (LWIR) are of great importance for a variety of civil and military applications. A very important parameter of IR photodetectors is dark current, which affects the detectivity directly. Chemical and physical passivation has revealed to be an efficient technique to reduce surface component of dark current, which will become a dominant current in focal plane arrays (FPA). In this paper we talk about the electrochemistry and dielectric method for passivation. We choose anodic sulfide and SiO2 passivation. The leakage current as a function of bias voltage (I–V) results show dark current of anodic sulfide device was two orders of magnitude lower than unpassivation one, but reactive magnetron sputtering SiO2 didn’t perform well. The highest R0A we get from the sulfurizing experiment is 657Ω·cm2 in 77K. After fabrication the measured cutoff wavelength is 5.0μm. Finally blackbody test result shows that the peak quantum efficiency (QE) at 3.33μm is 68% and the peak detectivity is 7.16x1011cm·Hz1/2/W.

Paper Details

Date Published: 20 November 2014
PDF: 6 pages
Proc. SPIE 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications, 93001K (20 November 2014); doi: 10.1117/12.2072179
Show Author Affiliations
Hongyue Hao, Institute of Semiconductors (China)
Wei Xiang, Institute of Semiconductors (China)
Guowei Wang, Institute of Semiconductors (China)
Dongwei Jiang, Institute of Semiconductors (China)
Yingqiang Xu, Institute of Semiconductors (China)
Zhengwei Ren, Institute of Semiconductors (China)
Zhenhong He, Institute of Semiconductors (China)
Zhichuan Niu, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 9300:
International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications
Mircea Guina; Haimei Gong; Zhichuan Niu; Jin Lu, Editor(s)

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