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Proceedings Paper

AlGaInN laser diode technology for defence, security and sensing applications
Author(s): Stephen P. Najda; Piotr Perlin; Tadek Suski; Lucja Marona; Mike Boćkowski; Mike Leszczyński; Przemek Wisniewski; Robert Czernecki; Robert Kucharski; Grzegorz Targowski; Scott Watson; Antony E. Kelly
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Paper Abstract

The latest developments in AlGaInN laser diode technology are reviewed for defence, security and sensing applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., i.e, 380nm, to the visible, i.e., 530nm, by tuning the indium content of the laser GaInN quantum well. Advantages of using Plasma assisted MBE (PAMBE) compared to more conventional MOCVD epitaxy to grow AlGaInN laser structures are highlighted. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of <100mW in the 400-420nm wavelength range that are suitable for telecom applications. Visible light communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Gallium-nitride (GaN) blue laser diode is reported. High power operation of AlGaInN laser diodes is demonstrated with a single chip, AlGaInN laser diode ‘mini-array’ with a common p-contact configuration at powers up to 2.5W cw at 410nm. Low defectivity and highly uniform GaN substrates allow arrays and bars of nitride lasers to be fabricated. GaN laser bars of up to 5mm with 20 emitters, mounted in a CS mount package, give optical powers up to 4W cw at ~410nm with a common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space and/or fibre optic system integration within a very small form-factor.or.

Paper Details

Date Published: 31 October 2014
PDF: 7 pages
Proc. SPIE 9254, Emerging Technologies in Security and Defence II; and Quantum-Physics-based Information Security III, 92540Z (31 October 2014); doi: 10.1117/12.2072172
Show Author Affiliations
Stephen P. Najda, TopGaN Ltd. (Poland)
Piotr Perlin, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Tadek Suski, Institute of High Pressure Physics (Poland)
Lucja Marona, Institute of High Pressure Physics (Poland)
Mike Boćkowski, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Mike Leszczyński, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Przemek Wisniewski, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Robert Czernecki, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Robert Kucharski, Ammono S.A. (Poland)
Grzegorz Targowski, TopGaN Ltd. (Poland)
Scott Watson, Univ. of Glasgow (United Kingdom)
Antony E. Kelly, Univ. of Glasgow (United Kingdom)


Published in SPIE Proceedings Vol. 9254:
Emerging Technologies in Security and Defence II; and Quantum-Physics-based Information Security III
Keith L. Lewis; Mark T. Gruneisen; Miloslav Dusek; Richard C. Hollins; Thomas J. Merlet; John G. Rarity; Alexander Toet, Editor(s)

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