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Proceedings Paper

Polarization-independent broadband absorption enhancement of thin-film InGaAs photodetector
Author(s): Dong Fu; Jietao Liu; Binzong Xu; Yun Xu; Guofeng Song; Xin Wei
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Paper Abstract

The trade-off between the enhanced signal-to-noise ratio and reduced light absorption in thin-film photodetectors is the main issue for improving device performance. Nanoscale patterning of metal/dielectric interface can couple incident light into surface plasmon polaritons (SPPs) modes, leading to the enhanced absorption. However, due to the nature of resonant excitation of SPPs, it is difficult to realize broadband absorption enhancement. In this study, we propose a novel device structure to achieve absorption enhancement over the whole spectral response range of the thin-film In0.53Ga0.47As photodetector. Numerical simulation shows that both the preferential forward scattering of InP cylinder and grating coupled waveguide modes contribute to the broadband absorption enhancement.

Paper Details

Date Published: 20 November 2014
PDF: 5 pages
Proc. SPIE 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications, 93001H (20 November 2014); doi: 10.1117/12.2072158
Show Author Affiliations
Dong Fu, Institute of Semiconductors (China)
Jietao Liu, Institute of Semiconductors (China)
Binzong Xu, Institute of Semiconductors (China)
Yun Xu, Institute of Semiconductors (China)
Guofeng Song, Institute of Semiconductors (China)
Xin Wei, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 9300:
International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications
Mircea Guina; Haimei Gong; Zhichuan Niu; Jin Lu, Editor(s)

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