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Proceedings Paper

Proximity corrected accurate in-die registration metrology
Author(s): M. Daneshpanah; F. Laske; M. Wagner; K.-D. Roeth; S. Czerkas; H. Yamaguchi; N. Fujii; S. Yoshikawa; K. Kanno; H. Takamizawa
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Paper Abstract

193nm immersion lithography is the mainstream production technology for the 20nm and 14nm logic nodes. Multi-patterning of an increasing number of critical layers puts extreme pressure on wafer intra-field overlay, to which mask registration error is a major contributor [1]. The International Technology Roadmap for Semiconductors (ITRS [2]) requests a registration error below 4 nm for each mask of a multi-patterning set forming one layer on the wafer. For mask metrology at the 20nm and 14nm logic nodes, maintaining a precision-to-tolerance (P/T) ratio below 0.25 will be very challenging. Full characterization of mask registration errors in the active area of the die will become mandatory. It is well-known that differences in pattern density and asymmetries in the immediate neighborhood of a feature give rise to apparent shifts in position when measured by optical metrology systems, so-called optical proximity effects. These effects can easily be similar in magnitude to real mask placement errors, and uncorrected can result in mis-qualification of the mask. Metrology results from KLA-Tencor’s next generation mask metrology system are reported, applying a model-based algorithm [3] which includes corrections for proximity errors. The proximity corrected, model-based measurements are compared to standard measurements and a methodology presented that verifies the correction performance of the new algorithm.

Paper Details

Date Published: 28 July 2014
PDF: 7 pages
Proc. SPIE 9256, Photomask and Next-Generation Lithography Mask Technology XXI, 92560F (28 July 2014); doi: 10.1117/12.2072074
Show Author Affiliations
M. Daneshpanah, KLA-Tencor Corp. (United States)
F. Laske, KLA-Tencor GmbH (Germany)
M. Wagner, KLA-Tencor Ltd. (Israel)
K.-D. Roeth, KLA-Tencor GmbH (Germany)
S. Czerkas, KLA-Tencor GmbH (Germany)
H. Yamaguchi, Dai Nippon Printing Co., Ltd. (Japan)
N. Fujii, Dai Nippon Printing Co., Ltd. (Japan)
S. Yoshikawa, Dai Nippon Printing Co., Ltd. (Japan)
K. Kanno, Dai Nippon Printing Co., Ltd. (Japan)
H. Takamizawa, Dai Nippon Printing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 9256:
Photomask and Next-Generation Lithography Mask Technology XXI
Kokoro Kato, Editor(s)

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