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Proceedings Paper

Study on inductively coupled plasma etching induced damage of InSb
Author(s): Liwen Wang; Junjie Si; Guodong Zhang; Caijing Cheng; Dongfeng Geng
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Paper Abstract

InSb is an important Ⅲ-Ⅴnarrow gap compound semiconductor material. It is widely used in optoelectronic devices manufacture especially mid-wave infrared detectors. With the application of ICP etching in large-scale InSb IRFPA detectors fabrication process, the influence of ICP etching induced damage on InSb IRFPA devices has been paid more attention. Surface states which reflect the characteristics of semiconductor surface play an important role in the study on etching damage of semiconductor materials. In this paper, the surface state density on three InSb samples: one sample without etching, one sample etched by ICP and another sample wet etched by lactic acid/nitric acid etchant after ICP etching, is tested and calculated by quasi-static C-V method. The characterization and removal of ICP etching induced damage are investigated. Furthermore, the method of testing and calculating the distribution of surface state density has been presented detailedly in this paper. This work plays a significant role in the development of large-scale InSb IRFPA detectors.

Paper Details

Date Published: 20 November 2014
PDF: 10 pages
Proc. SPIE 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications, 93001F (20 November 2014); doi: 10.1117/12.2071936
Show Author Affiliations
Liwen Wang, Luoyang Opto-electro Technology Development Ctr. (China)
Junjie Si, Luoyang Opto-electro Technology Development Ctr. (China)
Guodong Zhang, Luoyang Opto-electro Technology Development Ctr. (China)
Caijing Cheng, Luoyang Opto-electro Technology Development Ctr. (China)
Dongfeng Geng, Luoyang Opto-electro Technology Development Ctr. (China)


Published in SPIE Proceedings Vol. 9300:
International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications
Mircea Guina; Haimei Gong; Zhichuan Niu; Jin Lu, Editor(s)

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