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Proceedings Paper

Detailed comparison of performance of a Fabry-Perot semiconductor laser under both strong and weak injection
Author(s): Yali Zhang; Xuebao Peng; Shangjian Zhang; Yong Liu
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Paper Abstract

We numerically and experimentally investigate and compare the performance of a Fabry-Perot laser diode (FP-LD) under both strong- and weak-injection in detail. The numerical simulation results prove that the optically injection-locked semiconductor laser will become stable in the injection-locking region under the above two conditions. Nonetheless, the former can achieve stability faster than the latter whatever the frequency detuning is. The dynamic injection-locking map and the property of side-mode suppression ratio (SMSR) for the optically injection-locked FP-LD are experimentally obtained, and associated experiment phenomena are observed and qualitatively discussed for both conditions. Our experiments show that quite different dynamics occur in the two conditions, with weak-injection arrangement offering overall benefits in terms of more complicated dynamics and potential application.

Paper Details

Date Published: 3 December 2014
PDF: 7 pages
Proc. SPIE 9267, Semiconductor Lasers and Applications VI, 926708 (3 December 2014); doi: 10.1117/12.2071843
Show Author Affiliations
Yali Zhang, Univ. of Electronic Science and Technology of China (China)
Xuebao Peng, Univ. of Electronic Science and Technology of China (China)
Shangjian Zhang, Univ. of Electronic Science and Technology of China (China)
Yong Liu, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 9267:
Semiconductor Lasers and Applications VI
Ninghua Zhu; Werner H. Hofmann, Editor(s)

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