Share Email Print
cover

Proceedings Paper

Simulation of ultrafast carrier relaxation processes in pulse/probe and dual pulse correlation probing of InGaAs-type narrow band gap semiconductors
Author(s): James E. Bair; J. Peter Krusius
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

An ensemble Monte Carlo technique has been developed for the simulation of optical pulse-and-probe and dual pulse correlation experiments with tunable laser sources in InGaAs thin films lattice matched to InP. Electrons and holes, and all scattering mechanisms, including carrier-carrier scattering, have been included. The time evolution of electron and hole distributions, and optical absorption have been simulated. Results are correlated with measured data from the research group of C. Pollock at this conference. It was found that inhomogeneity effects and heavy and light holes are necessary for good agreement with experimental data. Finally the extraction of time constants from measurements is a1dresset

Paper Details

Date Published: 1 August 1990
PDF: 8 pages
Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); doi: 10.1117/12.20717
Show Author Affiliations
James E. Bair, Cornell Univ. (United States)
J. Peter Krusius, Cornell Univ. (United States)


Published in SPIE Proceedings Vol. 1282:
Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III
Robert R. Alfano, Editor(s)

© SPIE. Terms of Use
Back to Top